New Vishay Siliconix 100 V N-Channel TrenchFET(R) Power MOSFETs Featuring ThunderFET(R) Technology Offer Industry-Low On-Resistance Down to 83 Milliohms in 1.6 mm by 1.6 mm and 2 mm by 2 mm Footprint Areas

New Vishay Siliconix 100 V N-Channel TrenchFET(R) Power MOSFETs Featuring ThunderFET(R) Technology Offer Industry-Low On-Resistance Down to 83 Milliohms in 1.6 mm by 1.6 mm and 2 mm by 2 mm Footprint Areas

MALVERN, PA — (Marketwire) — 01/07/13 — Vishay Intertechnology, Inc. (NYSE: VSH) today released two new 100 V n-channel TrenchFET® power MOSFETs that extend Vishay-s ThunderFET® technology to smaller package sizes. The and are the industry-s first 100 V n-channel devices in the compact, thermally enhanced PowerPAK® SC-75 1.6 mm by 1.6 mm and PowerPAK SC-70 2 mm by 2 mm footprint areas to offer on-resistance of less than 200 and 100 milliohms, respectively.The MOSFETs released t