global-communication-semiconductors Archives

Global Communication Semiconductors, LLC (GCS) Announces a GaAs-Based Super-Low-Barrier Terahertz Mixer Diode to Further Expand Its THz Diode Process Portfolio for Millimeter-Wave Transceiver Systems

By Publisher on May 4, 2015 Hardware, Picture Gallery

TORRANCE, CA — (Marketwired) — 05/04/15 — Global Communication Semiconductors, LLC (GCS), a pure-play III-V compound semiconductor wafer foundry, announced today that its proprietary super-low-barrier Terahertz mixer diode MMIC foundry process will now be offered to address the millimeter-wave transceiver applications that require low LO drive."Up until now, low-barrier diode with a forward voltage (Vf) of 0.3V was mainly dominated by Silicon technology. However, the drawback of Silicon

Global Communication Semiconductors, LLC (GCS) Announces Two InGaP HBT Foundry Processes to Address the VCO for Point-to-Point and 12V PA for Small Cell PA Infrastructure Markets

By Publisher on May 23, 2013 Hardware, Picture Gallery

TORRANCE, CA — (Marketwired) — 05/23/13 — Global Communication Semiconductors, LLC. (GCS), a pure-play III-V compound semiconductor wafer foundry announced today that its proprietary InGaP HBT D5 and P7 foundry processes will now be offered to address the wide tuning range VCO and the 12V PA requirements."The D5 InGaP HBT process offers an advantage of a wider (2x) frequency tuning range, in addition to maintaining the super low phase noise performance offered by our already successful