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Vishay Intertechnology-s New Series of Surface-Mount PAR(R) TVS Combines 5 kW High Surge Capability With + 185 Degrees C Operating Junction Temperature in DO-214AB Package

Vishay Intertechnology-s New Series of Surface-Mount PAR(R) TVS Combines 5 kW High Surge Capability With + 185 Degrees C Operating Junction Temperature in DO-214AB Package

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MALVERN, PA -- (Marketwire) -- 12/10/12 -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new series of surface-mount PAR® transient voltage suppressors (TVS) in the SMC DO-214AB package. For automotive and telecom applications, 5KASMC series devices feature high surge capability to 5 kW at 10/1000 microseconds and an…

SuVolta Announces Circuit-Level Performance and Power Advantages of DDC Technology at IEDM

SuVolta Announces Circuit-Level Performance and Power Advantages of DDC Technology at IEDM

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First DDC-Based Products Expected in First Half 2013…

Micrel Declares 2012 Fourth Quarter Cash Dividend Early

Micrel Declares 2012 Fourth Quarter Cash Dividend Early

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SAN JOSE, CA -- (Marketwire) -- 12/07/12 -- Micrel, Incorporated (NASDAQ: MCRL), a leading global manufacturer of IC solutions for the worldwide high performance linear and power, LAN and timing and communications markets, announced today that the Company-s Board of Directors has authorized an accelerated quarterly cash dividend of…

New Vishay Siliconix AEC-Q101-Qualified, 40 V N-Channel TrenchFET(R) Power MOSFET Features Low On-Resistance Down to 1.1 Milliohms and Continuous Drain Current of 200 A in 7-Pin D2PAK Packaging

New Vishay Siliconix AEC-Q101-Qualified, 40 V N-Channel TrenchFET(R) Power MOSFET Features Low On-Resistance Down to 1.1 Milliohms and Continuous Drain Current of 200 A in 7-Pin D2PAK Packaging

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MALVERN, PA -- (Marketwire) -- 12/06/12 -- Vishay Intertechnology Inc. (NYSE: VSH) today introduced a new AEC-Q101-qualified, 40 V n-channel TrenchFET® power MOSFET. Specifically for "heavy duty" automotive applications, the SQM200N04-1m1L is Vishay-s first power MOSFET to take advantage of the low resistance contribution and very high current rating…

STMicroelectronics Named a Thomson Reuters 2012 Top 100 Global Innovator

STMicroelectronics Named a Thomson Reuters 2012 Top 100 Global Innovator

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GENEVA -- (Marketwire) -- 12/06/12 -- STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, was named a Thomson Reuters 2012 Top 100 Global Innovator this weekrecognizing its achievements as one of the world-s most innovative companies. The program, an initiative of the…

Real Intent Rolls Out New Version of Ascent Lint for Early Functional Verification

Real Intent Rolls Out New Version of Ascent Lint for Early Functional Verification

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V2.0 Release With 60 Comprehensive New Rules & Enhanced Systemverilog Support Significantly Improves Complex Bug Detection Early in Design Cycle…

Vishay Intertechnology Releases New 45 V TMBS(R) Trench MOS Barrier Schottky Rectifiers in Low-Profile SlimSMA(TM) Package

Vishay Intertechnology Releases New 45 V TMBS(R) Trench MOS Barrier Schottky Rectifiers in Low-Profile SlimSMA(TM) Package

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High Current Density Devices Feature Forward Currents to 5 A and VF Down to 0.37 V…

Lattice Will Showcase Liquid Lens Technology at China Security Expo 2012

Lattice Will Showcase Liquid Lens Technology at China Security Expo 2012

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Varioptic Liquid Lens Technology and Helion IP Featured on Lattice HDR-60 Video Camera Development Kit…

Vishay Launches – 20 V P-Channel MOSFET in 3.3 mm Square Package With Industry-Low On-Resistance of 4.8 Milliohms at a 4.5 V Gate Drive

Vishay Launches – 20 V P-Channel MOSFET in 3.3 mm Square Package With Industry-Low On-Resistance of 4.8 Milliohms at a 4.5 V Gate Drive

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MALVERN, PA -- (Marketwire) -- 11/26/12 -- Vishay Intertechnology, Inc. (NYSE: VSH) today released the , the industry-s first - 20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package to offer on-resistance of just 4.8 milliohms maximum at a 4.5 V gate drive. The Si7655DN is…

Vishay Intertechnology to Present at 2012 West China Power Seminar on Nov. 24 in Xi-an

Vishay Intertechnology to Present at 2012 West China Power Seminar on Nov. 24 in Xi-an

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Held Jointly With the China Power Supply Society, Seminar to Explore Capacitors, Resistors, Inductors, MOSFETs, Power Modules, and Diodes in New Energy, Military, Communications, and Industrial Applications…


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