THUNDER BAY, ONTARIO — (Marketwired) — 07/29/13 — Editors Note: There is a photo associated with this Press Release.
Meaglow Ltd. (Privately Held) announces the installation of a for the group of Professor Necmi Biyikli, of the Institute of Materials Science and Nanotechnology, at Bilkent University in Turkey. The plasma source is being used to upgrade their Atomic Layer Deposition (ALD) system by replacing an inductively coupled plasma source. This enhancement will reduce the oxygen contamination in ALD systems and increase the quality of Nitride thin films grown.
“The Bilkent system was easy to retrofit and the Meaglow Plasma source was the perfect solution for their oxygen contamination problem.” Says Dr. Butcher, Chief Scientist of Meaglow.
Initial results show a significant reduction of oxygen content in compound Nitride films grown. Results will be presented October 27th-November 1st at the 224th in San Francisco, CA at an invited talk presented at the symposium on “Atomic Layer Deposition Applications”.
Meaglow is now focused on commercializing its hollow cathode plasma technology which also has the advantage of scalability to large deposition areas. Meaglow is seeking additional ALD system owners and suppliers interested in removing the oxygen contamination in their films. The Plasma source can be used to retrofit existing systems or can be integrated with equipment manufacturers. The plasma source can be utilized in a number of different applications including MBE, and LPMOCVD among others. Interested parties should email
About Meaglow Ltd.
Meaglow Ltd. produces a new range of epitaxy equipment (migration enhanced afterglow), MBE & MOCVD accessories, and provides specialized semiconductor thin films to research institutes and industry. Please visit us at .
To view the photo associated with this press release, please visit the following link: .
Contacts:
Meaglow Ltd.
1-807-252-4391
You must be logged in to post a comment Login