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/ CORRECTION – New Vishay Siliconix 150 V N-Channel TrenchFET(R) Power MOSFET With ThunderFET(R) Technology Offers On-Resistance Down to 18 Milliohms for DC/DC Applications

MALVERN, PA — (Marketwired) — 04/22/13 — In the news release, “New Vishay Siliconix 150 V N-Channel TrenchFET® Power MOSFET With ThunderFET® Technology Offers On-Resistance Down to 18 Milliohms for DC/DC Applications,” issued earlier today by Vishay Intertechnology, Inc. (NYSE: VSH), we are advised by the company that the product photo link in the last paragraph should read “” rather than “” as originally issued. Complete corrected text follows.

New Vishay Siliconix 150 V N-Channel TrenchFET® Power MOSFET With ThunderFET® Technology Offers On-Resistance Down to 18 Milliohms for DC/DC Applications

MALVERN, PA — April 22, 2013 — Vishay Intertechnology, Inc. (NYSE: VSH) today released a new n-channel TrenchFET® power MOSFET in the thermally enhanced PowerPAK® SO-8 package that extends the company-s ThunderFET® technology to 150 V. The Vishay Siliconix SiR872ADP offers low on-resistance of 18 milliohms at 10 V and 23 milliohms at 7.5 V while maintaining low gate charge of 31 nC typical at 10 V and 22.8 nC typical at 7.5 V.

The device released today is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors. In these applications, the SiR872ADP offers 45 % lower on-resistance than previous-generation devices to reduce conduction losses and improve total system efficiency.

The SiR872ADP provides a low on-resistance times gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — of 563 milliohms-nC at 10 V and 524 milliohms-nC at 7.5 V. The device-s FOM reduces conduction and switching losses to improve total system efficiency. By providing higher performance than multiple previous-generation devices, the MOSFET can potentially reduce overall component count and simplify designs.

The SiR872ADP is 100 % Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The device joins the recently released 100 V SiR846ADP and SiR870ADP and 80 V SiR826ADP ThunderFET MOSFETs, offering designers a variety of medium-voltage options in the PowerPAK SO-8 package. Vishay addresses the needs of all power conversion applications through its ThunderFET, TrenchFET Gen IV, and E/D Series MOSFETs.

Samples and production quantities of the new MOSFET are available now, with lead times of 13 to 14 weeks for large orders.

, a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world-s largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay-s product innovations, successful acquisition strategy, and “one-stop shop” service have made it a global industry leader. Vishay can be found on the Internet at .

TrenchFET, PowerPAK, and ThunderFET are registered trademarks of Siliconix incorporated.

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