OTTAWA, ON — (Marketwired) — 12/03/15 — Sidense Corp., a leading developer of non-volatile memory OTP IP cores, today announced that it has fully qualified its SiPROM one-time programmable (OTP) non-volatile memory (NVM) embedded memory products at SMIC–s (Semiconductor Manufacturing International Corporation) 130nm and 110nm G processes. This expands Sidense–s coverage of SMIC processes from 40nm to 130nm. Other 1T-OTP memory macros are under development for additional SMIC processes to address customer requirements for device development targeting applications in the Smart Connected Universe.
“With the qualification of the 130nm and 110nm G processes, Sidense now supports several popular SMIC processes with our 1T-OTP memory macros,” said Tom Schild, Vice President of Worldwide Sales at Sidense. “Our collaborative work with SMIC allows us to provide our common customers with reliable and secure non-volatile memory to embed in their silicon designs.”
SiPROM 1T-OTP macros are designed to operate from the nominal SMIC 130 and 110 process supply voltages of 1.8V core and 3.3V I/O. The macros also support read operations with a lower I/O supply voltage (down to 1.71V) for use in battery operated devices. Customers are using Sidense SiPROM 1T-OTP macros in SMIC–s 130nm and 110 G processes in applications such as digital timing, media processing and multimedia.
SiPROM provides the broadest range of process node coverage — from 130nm down to 55nm. Densities up to 512 Kbits per macro are available and multiple macros can be used for higher memory capacity, making SiPROM an ideal and field-programmable replacement for masked ROM and, in certain applications, external Flash memory. Designers can choose between four read modes to trade off memory density, read access time, enhanced reliability and enhanced security, and different read modes may be combined in the same macro.
SiPROM macros contain a built-in charge pump, which provides the voltage necessary to program the memory in the field after the chip is packaged. Alternately, programming voltage may be supplied externally through a pad on the chip. SiPROM uses include HDCP encryption keys, analog trim and calibration, boot code and firmware storage, Chip ID, RFID, and other mobile and wireless, medical, and automotive applications.
The Smart Connected Universe is a term at Sidense to describe a collection of market segments that are both Smart (having computational capability) and are connected (typically wirelessly). They share a common set of requirements in cost, power, performance and security. These segments cut across several traditional market segments and include Mobile Computing, IoT, Wearables, Automotive, Medical and Industrial.
Sidense Corp. provides very dense, highly reliable and secure non-volatile one-time programmable (OTP) Logic Non-Volatile Memory (LNVM) IP for use in standard-logic CMOS processes. The Company, with over 120 patents granted or pending, licenses OTP memory IP based on its innovative one-transistor 1T-Fuse bit cell, which does not require extra masks or process steps to manufacture. Sidense 1T-OTP macros provide a better field-programmable, reliable and cost-effective solution than flash, mask ROM, eFuse and other embedded and off-chip NVM technologies for many code storage, encryption key, analog trimming and device configuration uses.
Over 150 companies, including many of the top fabless semiconductor manufacturers and IDMs, have adopted Sidense 1T-OTP as their NVM solution for more than 500 designs. Customers are realizing outstanding savings in solution cost and power consumption along with better security and reliability for applications ranging from mobile and consumer devices to high-temperature, high-reliability automotive and industrial electronics. The IP is offered at and supported by all top-tier semiconductor foundries and selected IDMs. Sidense is headquartered in Ottawa, Canada with sales offices worldwide. For more information, please visit .
Susan Cain
Cain Communications for Sidense
Tel: 408-393-4794
Email:
Jim Lipman
Sidense
Tel: 925-606-1370
Email:
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